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MPS750RLRA

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Manufacturer No:

MPS750RLRA

Manufacturer:

ON Semiconductor

HK JDW NO:

598-MPS750RLRA

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Datasheet:

MPS750RLRA

Description:

MPS750RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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MPS750RLRA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 75MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

MPS750RLRA Features


the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz

MPS750RLRA Applications


There are a lot of ON Semiconductor MPS750RLRA applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
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Step5Bar-code shipping tag

MPS750RLRA

technical specifications, attributes, parameters and parts with similar specifications to MPS750RLRA.

  • Type
    Parameter
    Select All
  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2009

  • JESD-609 Code

    e0

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin/Lead (Sn/Pb)

  • HTS Code

    8541.21.00.95

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    -40V

  • Max Power Dissipation

    625mW

  • Terminal Position

    BOTTOM

  • Peak Reflow Temperature (Cel)

    240

  • Reach Compliance Code

    not_compliant

  • Current Rating

    -2A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    MPS750

  • Pin Count

    3

  • JESD-30 Code

    O-PBCY-T3

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Element Configuration

    Single

  • Transistor Application

    AMPLIFIER

  • Gain Bandwidth Product

    75MHz

  • Polarity/Channel Type

    PNP

  • Transistor Type

    PNP

  • Collector Emitter Voltage (VCEO)

    500mV

  • Max Collector Current

    2A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    75 @ 1A 2V

  • Current - Collector Cutoff (Max)

    100nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    500mV @ 200mA, 2A

  • Collector Emitter Breakdown Voltage

    40V

  • Current - Collector (Ic) (Max)

    2A

  • Transition Frequency

    75MHz

  • Collector Emitter Saturation Voltage

    500mV

  • Collector Base Voltage (VCBO)

    60V

  • Emitter Base Voltage (VEBO)

    5V

  • hFE Min

    75

  • RoHS Status

    Non-RoHS Compliant

  • Lead Free

    Contains Lead

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Transistor Element Material

    SILICON

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