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MMBTA28-7
MMBTA28-7
233-MMBTA28-7
TO-236-3, SC-59, SOT-23-3
MMBTA28-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
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MMBTA28-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of 500mA is necessary for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 125MHz.Single BJT transistor can be broken down at a voltage of 80V volts.A maximum collector current of 500mA volts can be achieved.
MMBTA28-7 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 125MHz
MMBTA28-7 Applications
There are a lot of Diodes Incorporated MMBTA28-7 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
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MMBTA28-7
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