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  • MMBTA06LT1G

MMBTA06LT1G

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Manufacturer No:

MMBTA06LT1G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-MMBTA06LT1G

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

MMBTA06LT1G

Description:

MMBTA06LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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MMBTA06LT1G Description

 

MMBTA06LT1G NPN transistor is designed for linear and switching applications. Comparatively the Field-effect transistors, MMBTA06LT1G transistors have slower switching speeds, their input impedance is very low and the power consumption is significant. On Semiconductor MMBTA06LT1G is widely used in television, broadcasting communications radar, computers, electronic devices for automatic control as well as household appliances as well as many other fields.

 

 

MMBTA06LT1G Features

 

AEC?Q101 Qualified and PPAP Capable

Miniature SOT-23 Surface Mount Package Saves Board Space

Pb?Free

Control Change Requirements

Halogen Free/BFR Free

RoHS Compliant

 

MMBTA06LT1G Applications

 

Television

Broadcasting communications

Radar

Computers

Household appliances


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

MMBTA06LT1G

technical specifications, attributes, parameters and parts with similar specifications to MMBTA06LT1G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    4 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 day ago)

  • Contact Plating

    Tin

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Surface Mount

    YES

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2005

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    80V

  • Max Power Dissipation

    225mW

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    500mA

  • Frequency

    100MHz

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Base Part Number

    MMBTA06

  • Pin Count

    3

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    300mW

  • Transistor Application

    AMPLIFIER

  • Gain Bandwidth Product

    100MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    80V

  • Max Collector Current

    500mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 100mA 1V

  • Current - Collector Cutoff (Max)

    100nA

  • Vce Saturation (Max) @ Ib, Ic

    250mV @ 10mA, 100mA

  • Collector Emitter Breakdown Voltage

    80V

  • Transition Frequency

    100MHz

  • Collector Emitter Saturation Voltage

    250mV

  • Max Breakdown Voltage

    80V

  • Collector Base Voltage (VCBO)

    80V

  • Emitter Base Voltage (VEBO)

    4V

  • hFE Min

    100

  • Height

    1.016mm

  • Length

    3.0226mm

  • Width

    1.397mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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