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MMBT3904SL
MMBT3904SL
598-MMBT3904SL
SOT-923F
MMBT3904SL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
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MMBT3904SL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.This device can take an input voltage of 40V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMBT3904SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904SL Applications
There are a lot of ON Semiconductor MMBT3904SL applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
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MMBT3904SL
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