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MJF15031G
MJF15031G
598-MJF15031G
TO-220-3 Full Pack
MJF15031G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MJF15031G Overview
This device has a DC current gain of 20 @ 4A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.In this part, there is a transition frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJF15031G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJF15031G Applications
There are a lot of ON Semiconductor MJF15031G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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MJF15031G
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