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MJE521
MJE521
598-MJE521
TO-225AA, TO-126-3
MJE521 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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MJE521 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 1A 1V.Emitter base voltages of 4V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).10MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 400V volts.In extreme cases, the collector current can be as low as 4A volts.
MJE521 Features
the DC current gain for this device is 40 @ 1A 1V
the emitter base voltage is kept at 4V
the current rating of this device is 4A
a transition frequency of 10MHz
MJE521 Applications
There are a lot of ON Semiconductor MJE521 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
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MJE521
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