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MJE182STU
MJE182STU
598-MJE182STU
TO-225AA, TO-126-3
MJE182STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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MJE182STU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 100mA 1V.As it features a collector emitter saturation voltage of 1.7V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.7V @ 600mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.In this part, there is a transition frequency of 50MHz.A maximum collector current of 3A volts can be achieved.
MJE182STU Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE182STU Applications
There are a lot of ON Semiconductor MJE182STU applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
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MJE182STU
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