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MJD45H11TM
MJD45H11TM
598-MJD45H11TM
TO-252-3, DPak (2 Leads + Tab), SC-63
MJD45H11TM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MJD45H11TM Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.Parts of this part have transition frequencies of 40MHz.The breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 8A volts.
MJD45H11TM Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
MJD45H11TM Applications
There are a lot of ON Semiconductor MJD45H11TM applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
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MJD45H11TM
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