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MJD200
MJD200
598-MJD200
TO-252-3, DPak (2 Leads + Tab), SC-63
MJD200 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MJD200 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 45 @ 2A 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 1.8V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.8V @ 1A, 5A.The emitter base voltage can be kept at 8V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.As a result, the part has a transition frequency of 65MHz.A maximum collector current of 5A volts is possible.
MJD200 Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200 Applications
There are a lot of ON Semiconductor MJD200 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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MJD200
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