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MJB41CT4G
MJB41CT4G
598-MJB41CT4G
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MJB41CT4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MJB41CT4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 3A 4V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 6A.3MHz is present in the transition frequency.There is a breakdown input voltage of 100V volts that it can take.A maximum collector current of 6A volts is possible.
MJB41CT4G Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJB41CT4G Applications
There are a lot of ON Semiconductor MJB41CT4G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
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MJB41CT4G
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