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KST4123MTF
KST4123MTF
598-KST4123MTF
TO-236-3, SC-59, SOT-23-3
KST4123MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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KST4123MTF Overview
In this device, the DC current gain is 50 @ 2mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.In extreme cases, the collector current can be as low as 200mA volts.
KST4123MTF Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
KST4123MTF Applications
There are a lot of ON Semiconductor KST4123MTF applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
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KST4123MTF
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