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KSD2012GTU
KSD2012GTU
598-KSD2012GTU
TO-220-3 Full Pack
KSD2012GTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
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KSD2012GTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 500mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In the part, the transition frequency is 3MHz.In extreme cases, the collector current can be as low as 3A volts.
KSD2012GTU Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD2012GTU Applications
There are a lot of ON Semiconductor KSD2012GTU applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
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KSD2012GTU
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