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KSD1621TTF
KSD1621TTF
598-KSD1621TTF
TO-243AA
KSD1621TTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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KSD1621TTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of 180mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Collector current can be as low as 2A volts at its maximum.
KSD1621TTF Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
KSD1621TTF Applications
There are a lot of ON Semiconductor KSD1621TTF applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
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KSD1621TTF
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