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KSD1616YTA
KSD1616YTA
598-KSD1616YTA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
KSD1616YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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KSD1616YTA Overview
DC current gain in this device equals 135 @ 100mA 2V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 300mV @ 50mA, 1A means Ic has reached its maximum value(saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Collector current can be as low as 1A volts at its maximum.
KSD1616YTA Features
the DC current gain for this device is 135 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
KSD1616YTA Applications
There are a lot of ON Semiconductor KSD1616YTA applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
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KSD1616YTA
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