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KSC900GTA
KSC900GTA
598-KSC900GTA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
KSC900GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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KSC900GTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500μA 3V.With a collector emitter saturation voltage of 100mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.Product comes in TO-92-3 supplier package.There is a 25V maximal voltage in the device due to collector-emitter breakdown.A maximum collector current of 50mA volts can be achieved.
KSC900GTA Features
the DC current gain for this device is 200 @ 500μA 3V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 200mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
the supplier device package of TO-92-3
KSC900GTA Applications
There are a lot of ON Semiconductor KSC900GTA applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
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KSC900GTA
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