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KSC838COBU
KSC838COBU
598-KSC838COBU
TO-226-3, TO-92-3 (TO-226AA)
KSC838COBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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KSC838COBU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 2mA 12V.A VCE saturation (Max) of 400mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 4V to gain high efficiency.The current rating of this fuse is 30mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor comes in a supplier device package of TO-92-3.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible to have a collector current as low as 30mA volts at Single BJT transistors maximum.
KSC838COBU Features
the DC current gain for this device is 70 @ 2mA 12V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is 30mA
the supplier device package of TO-92-3
KSC838COBU Applications
There are a lot of ON Semiconductor KSC838COBU applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
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KSC838COBU
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