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KSC5026MOS
KSC5026MOS
598-KSC5026MOS
TO-225AA, TO-126-3
KSC5026MOS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
KSC5026MOS Overview
This device has a DC current gain of 20 @ 100mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 150mA, 750mA.The emitter base voltage can be kept at 7V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.As you can see, the part has a transition frequency of 15MHz.Collector current can be as low as 1.5A volts at its maximum.
KSC5026MOS Features
the DC current gain for this device is 20 @ 100mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 150mA, 750mA
the emitter base voltage is kept at 7V
the current rating of this device is 1.5A
a transition frequency of 15MHz
KSC5026MOS Applications
There are a lot of ON Semiconductor KSC5026MOS applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
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KSC5026MOS
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