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KSC2335OTU
KSC2335OTU
598-KSC2335OTU
TO-220-3
KSC2335OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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KSC2335OTU Overview
In this device, the DC current gain is 30 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 7A.Product comes in TO-220-3 supplier package.The device has a 400V maximal voltage - Collector Emitter Breakdown.Single BJT transistor is possible to have a collector current as low as 7A volts at Single BJT transistors maximum.
KSC2335OTU Features
the DC current gain for this device is 30 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
the supplier device package of TO-220-3
KSC2335OTU Applications
There are a lot of ON Semiconductor KSC2335OTU applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
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KSC2335OTU
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