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KSC1187YBU
KSC1187YBU
598-KSC1187YBU
TO-226-3, TO-92-3 (TO-226AA)
KSC1187YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
KSC1187YBU Overview
This device has a DC current gain of 120 @ 2mA 10V, which is the ratio between the collector current and the base current.Emitter base voltages of 4V can achieve high levels of efficiency.Its current rating is 30mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The product comes in the supplier device package of TO-92-3.Device displays Collector Emitter Breakdown (20V maximal voltage).During maximum operation, collector current can be as low as 30mA volts.
KSC1187YBU Features
the DC current gain for this device is 120 @ 2mA 10V
the emitter base voltage is kept at 4V
the current rating of this device is 30mA
the supplier device package of TO-92-3
KSC1187YBU Applications
There are a lot of ON Semiconductor KSC1187YBU applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
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KSC1187YBU
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