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KSB798GTF
KSB798GTF
598-KSB798GTF
TO-243AA
KSB798GTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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KSB798GTF Overview
DC current gain in this device equals 200 @ 100mA 1V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of -400mV allows maximum design flexibility.A VCE saturation (Max) of 400mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.Supplier device package SOT-89-3 comes with the product.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.In extreme cases, the collector current can be as low as 1A volts.
KSB798GTF Features
the DC current gain for this device is 200 @ 100mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
the supplier device package of SOT-89-3
KSB798GTF Applications
There are a lot of ON Semiconductor KSB798GTF applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
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KSB798GTF
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