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KSB1366G
KSB1366G
598-KSB1366G
TO-220-3 Full Pack
KSB1366G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
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KSB1366G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.As a result, the part has a transition frequency of 9MHz.In extreme cases, the collector current can be as low as 3A volts.
KSB1366G Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 9MHz
KSB1366G Applications
There are a lot of ON Semiconductor KSB1366G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
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KSB1366G
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