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HGT1S20N60C3S9A
HGT1S20N60C3S9A
598-HGT1S20N60C3S9A
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HGT1S20N60C3S9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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Description
The HGT1S20N60C3S9A is a 45A, 600V N-Channel IGBT. The greatest properties of MOSFETs and bipolar transistors are combined in this series of MOS gated high voltage switching devices. These devices have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25°C and 150°C, the significantly smaller on-state voltage loss fluctuates very modestly.
Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT.
Previously known as developmental type TA49178.
Features
Typical Fall Time...108ns at TJ=150°C
Short Circuit Rating
45A, 600V, TC=25°C
600V Switching SOA Capability
Low Conduction Loss
Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Applications
AC and DC motor drives offering speed control
Chopper and inverters
Solar inverters
SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers
UPS (Uninterruptible Power Supply) system
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HGT1S20N60C3S9A
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