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HGTG20N60B3D
HGTG20N60B3D
598-HGTG20N60B3D
TO-247-3
HGTG20N60B3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
HGTG20N60B3D is a switching device that combines the top features of MOSFETs with bipolar transistors. These devices feature the large input impedance that comes from a MOSFET and the lower on-state conduction loss that is typical of the bipolar transistor. The significantly lower on-state voltage drop is moderately varying between 25 and 150degC.
HGTG20N60B3D Features
40A, 600V at TC = 25°C
Typical Fall Time: 140ns at 150°C
Short Circuit Rated
Low Conduction Loss
Hyperfast Anti-Parallel Diode
HGTG20N60B3D Applications
AC and DC motor controls
Power supplies
Drivers
Solenoids
Relays
Contactors
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HGTG20N60B3D
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