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FZT853TA
FZT853TA
233-FZT853TA
TO-261-4, TO-261AA
FZT853TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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FZT853TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 340mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 340mV @ 500mA, 5A.Single BJT transistor is essential to maintain the continuous collector voltage at 6A to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 6A.As you can see, the part has a transition frequency of 130MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.A maximum collector current of 6A volts can be achieved.
FZT853TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 6A
a transition frequency of 130MHz
FZT853TA Applications
There are a lot of Diodes Incorporated FZT853TA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
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FZT853TA
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