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FZT789ATA
FZT789ATA
233-FZT789ATA
TO-261-4, TO-261AA
FZT789ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
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FZT789ATA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 25V volts.Collector current can be as low as 3A volts at its maximum.
FZT789ATA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
FZT789ATA Applications
There are a lot of Diodes Incorporated FZT789ATA applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
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FZT789ATA
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