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FMMTA56TA
FMMTA56TA
233-FMMTA56TA
TO-236-3, SC-59, SOT-23-3
FMMTA56TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
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FMMTA56TA Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.With the emitter base voltage set at -4V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.100MHz is present in the transition frequency.This device can take an input voltage of 80V volts before it breaks down.The maximum collector current is 500mA volts.
FMMTA56TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 100MHz
FMMTA56TA Applications
There are a lot of Diodes Incorporated FMMTA56TA applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
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FMMTA56TA
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