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FMMT494TA

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Manufacturer No:

FMMT494TA

Manufacturer:

Diodes Incorporated

HK JDW NO:

233-FMMT494TA

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

FMMT494TA

Description:

FMMT494TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW

Quantity:

In Stock : 999

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FMMT494TA Overview


DC current gain in this device equals 100 @ 250mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 1A for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 100MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 120V volts.Maximum collector currents can be below 1A volts.

FMMT494TA Features


the DC current gain for this device is 100 @ 250mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 100MHz

FMMT494TA Applications


There are a lot of Diodes Incorporated FMMT494TA applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FMMT494TA

technical specifications, attributes, parameters and parts with similar specifications to FMMT494TA.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    15 Weeks

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Number of Pins

    3

  • Weight

    7.994566mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Cut Tape (CT)

  • Published

    2006

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    120V

  • Max Power Dissipation

    500mW

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    100mA

  • Frequency

    100MHz

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Base Part Number

    FMMT494

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    500mW

  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    100MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    120V

  • Max Collector Current

    1A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 250mA 10V

  • Current - Collector Cutoff (Max)

    100nA

  • Vce Saturation (Max) @ Ib, Ic

    300mV @ 50mA, 500mA

  • Collector Emitter Breakdown Voltage

    120V

  • Transition Frequency

    100MHz

  • Collector Emitter Saturation Voltage

    300mV

  • Max Breakdown Voltage

    120V

  • Collector Base Voltage (VCBO)

    140V

  • Emitter Base Voltage (VEBO)

    7V

  • Continuous Collector Current

    1A

  • Height

    1.1mm

  • Length

    3mm

  • Width

    1.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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