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  • FMMT493ATA

FMMT493ATA

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Manufacturer No:

FMMT493ATA

Manufacturer:

Diodes Incorporated

HK JDW NO:

233-FMMT493ATA

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

FMMT493ATA

Description:

FMMT493ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW

Quantity:

In Stock : 999

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FMMT493ATA Overview


This device has a DC current gain of 300 @ 250mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.In the part, the transition frequency is 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.

FMMT493ATA Features


the DC current gain for this device is 300 @ 250mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 1A
a transition frequency of 150MHz

FMMT493ATA Applications


There are a lot of Diodes Incorporated FMMT493ATA applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FMMT493ATA

technical specifications, attributes, parameters and parts with similar specifications to FMMT493ATA.

  • Type
    Parameter
    Select All
  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    15 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Number of Pins

    3

  • Weight

    7.994566mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Cut Tape (CT)

  • Published

    2012

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    60V

  • Max Power Dissipation

    500mW

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    1A

  • Frequency

    150MHz

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Base Part Number

    FMMT493A

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    500mW

  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    150MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    60V

  • Max Collector Current

    1A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    300 @ 250mA 10V

  • Current - Collector Cutoff (Max)

    100nA

  • Vce Saturation (Max) @ Ib, Ic

    500mV @ 100mA, 1A

  • Collector Emitter Breakdown Voltage

    60V

  • Transition Frequency

    150MHz

  • Collector Emitter Saturation Voltage

    500mV

  • Max Breakdown Voltage

    60V

  • Collector Base Voltage (VCBO)

    120V

  • Emitter Base Voltage (VEBO)

    7V

  • hFE Min

    20

  • Max Junction Temperature (Tj)

    150°C

  • Continuous Collector Current

    1A

  • Height

    1.12mm

  • Length

    3.05mm

  • Width

    1.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

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