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FMB100
FMB100
598-FMB100
SOT-23-6 Thin, TSOT-23-6
FMB100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FMB100 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 5V DC current gain.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 20mA, 200mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.In the part, the transition frequency is 300MHz.An input voltage of 45V volts is the breakdown voltage.A maximum collector current of 500mA volts is possible.
FMB100 Features
the DC current gain for this device is 100 @ 150mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
FMB100 Applications
There are a lot of ON Semiconductor FMB100 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
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FMB100
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