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FJP5555TU
FJP5555TU
598-FJP5555TU
TO-220-3
FJP5555TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FJP5555TU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 800mA 3V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1A, 3.5A.The base voltage of the emitter can be kept at 14V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.A maximum collector current of 5A volts can be achieved.
FJP5555TU Features
the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 14V
the current rating of this device is 5A
FJP5555TU Applications
There are a lot of ON Semiconductor FJP5555TU applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
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FJP5555TU
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