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FJP13009H2TU
FJP13009H2TU
598-FJP13009H2TU
TO-220-3
FJP13009H2TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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FJP13009H2TU Overview
In this device, the DC current gain is 15 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 9V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (12A).As you can see, the part has a transition frequency of 4MHz.When collector current reaches its maximum, it can reach 12A volts.
FJP13009H2TU Features
the DC current gain for this device is 15 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009H2TU Applications
There are a lot of ON Semiconductor FJP13009H2TU applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
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FJP13009H2TU
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