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FJBE2150DTU
FJBE2150DTU
598-FJBE2150DTU
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FJBE2150DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FJBE2150DTU Overview
DC current gain in this device equals 20 @ 400mA 3V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 330mA, 1A.Emitter base voltages of 12V can achieve high levels of efficiency.Parts of this part have transition frequencies of 5MHz.When collector current reaches its maximum, it can reach 2A volts.
FJBE2150DTU Features
the DC current gain for this device is 20 @ 400mA 3V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 330mA, 1A
the emitter base voltage is kept at 12V
a transition frequency of 5MHz
FJBE2150DTU Applications
There are a lot of ON Semiconductor FJBE2150DTU applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
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FJBE2150DTU
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