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FCX596TA
FCX596TA
233-FCX596TA
TO-243AA
FCX596TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
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FCX596TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 250mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -350mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 25mA, 250mA.For high efficiency, the continuous collector voltage must be kept at -300mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -300mA for this device.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can be broken down at a voltage of 200V volts.Maximum collector currents can be below 300mA volts.
FCX596TA Features
the DC current gain for this device is 85 @ 250mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 25mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -300mA
a transition frequency of 150MHz
FCX596TA Applications
There are a lot of Diodes Incorporated FCX596TA applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
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FCX596TA
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