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DZT953-13
DZT953-13
233-DZT953-13
TO-261-4, TO-261AA
DZT953-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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DZT953-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 1V.A collector emitter saturation voltage of -420mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 420mV @ 400mA, 4A.For high efficiency, the continuous collector voltage must be kept at -5A.An emitter's base voltage can be kept at -6V to gain high efficiency.In this part, there is a transition frequency of 125MHz.A breakdown input voltage of 100V volts can be used.In extreme cases, the collector current can be as low as 5A volts.
DZT953-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 420mV @ 400mA, 4A
the emitter base voltage is kept at -6V
a transition frequency of 125MHz
DZT953-13 Applications
There are a lot of Diodes Incorporated DZT953-13 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
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DZT953-13
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