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D45H8G
D45H8G
598-D45H8G
TO-220-3
D45H8G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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D45H8G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.The maximum collector current is 10A volts.
D45H8G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz
D45H8G Applications
There are a lot of ON Semiconductor D45H8G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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D45H8G
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