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BUB323Z
BUB323Z
598-BUB323Z
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUB323Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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BUB323Z Overview
DC current gain in this device equals 500 @ 5A 4.6V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.7V @ 250mA, 10A.Continuous collector voltage should be kept at 10A for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
BUB323Z Features
the DC current gain for this device is 500 @ 5A 4.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz
BUB323Z Applications
There are a lot of ON Semiconductor BUB323Z applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
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BUB323Z
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