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BD810
BD810
598-BD810
TO-220-3
BD810 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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BD810 Overview
DC current gain in this device equals 15 @ 4A 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.When VCE saturation is 1.1V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -10A current rating.Parts of this part have transition frequencies of 1.5MHz.A maximum collector current of 10A volts can be achieved.
BD810 Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 1.5MHz
BD810 Applications
There are a lot of ON Semiconductor BD810 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
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BD810
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