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BD809G
BD809G
598-BD809G
TO-220-3
BD809G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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BD809G Overview
This device has a DC current gain of 15 @ 4A 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.When VCE saturation is 1.1V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.As a result, the part has a transition frequency of 1.5MHz.As a result, it can handle voltages as low as 80V volts.In extreme cases, the collector current can be as low as 10A volts.
BD809G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1.5MHz
BD809G Applications
There are a lot of ON Semiconductor BD809G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
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BD809G
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