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BD676
BD676
598-BD676
TO-225AA, TO-126-3
BD676 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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BD676 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The product comes in the supplier device package of TO-225AA.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.During maximum operation, collector current can be as low as 4A volts.
BD676 Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
the supplier device package of TO-225AA
BD676 Applications
There are a lot of ON Semiconductor BD676 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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BD676
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