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BD137G
BD137G
598-BD137G
TO-225AA, TO-126-3
BD137G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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BD137G Overview
DC current gain in this device equals 40 @ 150mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Collector current can be as low as 1.5A volts at its maximum.
BD137G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 6A
BD137G Applications
There are a lot of ON Semiconductor BD137G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
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BD137G
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