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BCX19
BCX19
598-BCX19
TO-236-3, SC-59, SOT-23-3
BCX19 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
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BCX19 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.As it features a collector emitter saturation voltage of 620mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 620mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 160MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.This product comes in a SOT-23-3 device package from the supplier.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BCX19 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 160MHz
the supplier device package of SOT-23-3
BCX19 Applications
There are a lot of ON Semiconductor BCX19 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
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BCX19
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