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BCW30LT1G
BCW30LT1G
598-BCW30LT1G
TO-236-3, SC-59, SOT-23-3
BCW30LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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BCW30LT1G Overview
In this device, the DC current gain is 215 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 500μA, 10mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor can take a breakdown input voltage of 32V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BCW30LT1G Features
the DC current gain for this device is 215 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
BCW30LT1G Applications
There are a lot of ON Semiconductor BCW30LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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BCW30LT1G
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