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BCP53T1G
BCP53T1G
598-BCP53T1G
TO-261-4, TO-261AA
BCP53T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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BCP53T1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -15A for this device.There is a transition frequency of 50MHz in the part.An input voltage of 80V volts is the breakdown voltage.Collector current can be as low as 1.5A volts at its maximum.
BCP53T1G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 50MHz
BCP53T1G Applications
There are a lot of ON Semiconductor BCP53T1G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
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BCP53T1G
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