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  • BC848ALT1G

BC848ALT1G

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Manufacturer No:

BC848ALT1G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-BC848ALT1G

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

BC848ALT1G

Description:

BC848ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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BC848ALT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.The part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 30V volts.Maximum collector currents can be below 100mA volts.

BC848ALT1G Features


the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC848ALT1G Applications


There are a lot of ON Semiconductor BC848ALT1G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BC848ALT1G

technical specifications, attributes, parameters and parts with similar specifications to BC848ALT1G.

  • Type
    Parameter
    Select All
  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Cut Tape (CT)

  • Published

    2007

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    30V

  • Max Power Dissipation

    300mW

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    100mA

  • Frequency

    100MHz

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Pin Count

    3

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    300mW

  • Halogen Free

    Halogen Free

  • Gain Bandwidth Product

    100MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    30V

  • Max Collector Current

    100mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    110 @ 2mA 5V

  • Current - Collector Cutoff (Max)

    15nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    600mV @ 5mA, 100mA

  • Collector Emitter Breakdown Voltage

    30V

  • Transition Frequency

    100MHz

  • Collector Emitter Saturation Voltage

    600mV

  • Max Breakdown Voltage

    30V

  • Collector Base Voltage (VCBO)

    30V

  • Emitter Base Voltage (VEBO)

    5V

  • hFE Min

    110

  • Height

    1.01mm

  • Length

    3.04mm

  • Width

    1.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    2 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 2 days ago)

  • Contact Plating

    Tin

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Surface Mount

    YES

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