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BC847BMTF
BC847BMTF
598-BC847BMTF
TO-236-3, SC-59, SOT-23-3
BC847BMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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BC847BMTF Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.A transition frequency of 300MHz is present in the part.The breakdown input voltage is 45V volts.A maximum collector current of 100mA volts can be achieved.
BC847BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC847BMTF Applications
There are a lot of ON Semiconductor BC847BMTF applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
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BC847BMTF
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