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BC556BTA

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Manufacturer No:

BC556BTA

Manufacturer:

ON Semiconductor

HK JDW NO:

598-BC556BTA

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Datasheet:

BC556BTA

Description:

BC556BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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BC556BTA Overview


This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Input voltage breakdown is available at 65V volts.A maximum collector current of 100mA volts is possible.

BC556BTA Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 150MHz

BC556BTA Applications


There are a lot of ON Semiconductor BC556BTA applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BC556BTA

technical specifications, attributes, parameters and parts with similar specifications to BC556BTA.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    6 Weeks

  • Contact Plating

    Tin

  • Mount

    Surface Mount, Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Number of Pins

    3

  • Weight

    240.007063mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tape & Box (TB)

  • Published

    2007

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    -65V

  • Max Power Dissipation

    500mW

  • Terminal Position

    BOTTOM

  • Current Rating

    -100mA

  • Frequency

    150MHz

  • Base Part Number

    BC556

  • Number of Elements

    1

  • Voltage

    65V

  • Element Configuration

    Single

  • Current

    1A

  • Power Dissipation

    500mW

  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    150MHz

  • Polarity/Channel Type

    PNP

  • Transistor Type

    PNP

  • Collector Emitter Voltage (VCEO)

    65V

  • Max Collector Current

    100mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    200 @ 2mA 5V

  • Current - Collector Cutoff (Max)

    15nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    650mV @ 5mA, 100mA

  • Collector Emitter Breakdown Voltage

    65V

  • Transition Frequency

    150MHz

  • Collector Emitter Saturation Voltage

    -250mV

  • Max Breakdown Voltage

    65V

  • Collector Base Voltage (VCBO)

    80V

  • Emitter Base Voltage (VEBO)

    5V

  • hFE Min

    110

  • Height

    4.58mm

  • Length

    4.58mm

  • Width

    3.86mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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