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BC546BZL1G
BC546BZL1G
598-BC546BZL1G
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
NPN-55°C~150°C TJ15nA1 Elements3 TerminationsSILICONNPNTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Tape & Box (TB)Through Hole
In Stock : 999
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Product Details
Purchasing and Inquiry
BC546BZL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.A transition frequency of 300MHz is present in the part.A breakdown input voltage of 65V volts can be used.Maximum collector currents can be below 100mA volts.
BC546BZL1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546BZL1G Applications
There are a lot of ON Semiconductor BC546BZL1G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
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BC546BZL1G
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