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BC489BZL1G
BC489BZL1G
598-BC489BZL1G
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BC489BZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
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Product Details
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BC489BZL1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 100mA, 1A.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.In extreme cases, the collector current can be as low as 500mA volts.
BC489BZL1G Features
the DC current gain for this device is 160 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489BZL1G Applications
There are a lot of ON Semiconductor BC489BZL1G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
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BC489BZL1G
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