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BC307BZL1G
BC307BZL1G
598-BC307BZL1G
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
BC307BZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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BC307BZL1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.When VCE saturation is 250mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.280MHz is present in the transition frequency.A maximum collector current of 100mA volts is possible.
BC307BZL1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 250mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz
BC307BZL1G Applications
There are a lot of ON Semiconductor BC307BZL1G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
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BC307BZL1G
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