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2SD1803S-TL-E
2SD1803S-TL-E
598-2SD1803S-TL-E
TO-252-3, DPak (2 Leads + Tab), SC-63
2SD1803S-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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2SD1803S-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 500mA 2V.When VCE saturation is 400mV @ 150mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.During maximum operation, collector current can be as low as 5A volts.
2SD1803S-TL-E Features
the DC current gain for this device is 140 @ 500mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
2SD1803S-TL-E Applications
There are a lot of ON Semiconductor 2SD1803S-TL-E applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
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2SD1803S-TL-E
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